Invention Grant
- Patent Title: Thin-film capacitor
- Patent Title (中): 薄膜电容器
-
Application No.: US12876611Application Date: 2010-09-07
-
Publication No.: US08411411B2Publication Date: 2013-04-02
- Inventor: Yasunobu Oikawa , Yoshihiko Yano
- Applicant: Yasunobu Oikawa , Yoshihiko Yano
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JPP2009-228092 20090930
- Main IPC: H01G4/228
- IPC: H01G4/228 ; H01G4/008

Abstract:
To provide a thin-film capacitor capable of preventing the degradation of electrical characteristics caused by direct contact between an adhesion layer of a terminal electrode and a dielectric layer, to increase the reliability. The thin-film capacitor comprises: a dielectric layer deposited on a base electrode; an upper electrode layer deposited on the dielectric layer; a terminal electrode including an adhesion layer, a seed layer, and a plating layer; a resin layer for wiring provided between the upper electrode layer and the terminal electrode for isolating the upper electrode layer from the terminal electrode; and a wiring layer provided so as to extend through the resin layer for wiring in contact with the adhesion layer for electrically connecting the upper electrode layer and the terminal electrode, wherein a composition of the wiring layer differs from that of the adhesion layer of the terminal electrode, and wherein a reducing power of the wiring layer to the dielectric layer is smaller than that of the adhesion layer.
Public/Granted literature
- US20110075319A1 THIN-FILM CAPACITOR Public/Granted day:2011-03-31
Information query