A memory circuit includes a first memory array. The first memory array includes at least one first memory cell for storing a first datum. The at least one first memory cell is coupled with a first word line and a second word line. A second memory array is coupled with the first memory array. The second memory array includes at least one second memory cell for storing a second datum. The at least one second memory cell is coupled with a third word line and a fourth word line. The first word line is coupled with the third word line. The first word line is misaligned from the third word line in a routing direction of the first word line in the first memory array.