Invention Grant
- Patent Title: Programmable read only memory
- Patent Title (中): 可编程只读存储器
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Application No.: US12229117Application Date: 2008-08-20
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Publication No.: US08411482B2Publication Date: 2013-04-02
- Inventor: Zhanping Chen , Sarvesh Kulkarni , Kevin Zhang
- Applicant: Zhanping Chen , Sarvesh Kulkarni , Kevin Zhang
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: G11C17/00
- IPC: G11C17/00 ; G11C17/14 ; G11C17/16 ; G11C17/18
Abstract:
A memory cell includes a fuse and at least one transistor. The transistor is used to control the programming or sensing of the fuse. A program voltage is applied to a stack of first and second conductive layers. A first portion of the stack couples the program voltage to a terminal of the transistor in a cell. A second portion of the stack couples the program voltage to a terminal of the transistor in another cell.
Public/Granted literature
- US20100046269A1 Programmable read only memory Public/Granted day:2010-02-25
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