Invention Grant
- Patent Title: Semiconducting devices and methods of preparing
- Patent Title (中): 半导体器件及其制备方法
-
Application No.: US12770795Application Date: 2010-04-30
-
Publication No.: US08411489B2Publication Date: 2013-04-02
- Inventor: Deepak Shukla , Dianne M. Meyer , Wendy G. Ahearn
- Applicant: Deepak Shukla , Dianne M. Meyer , Wendy G. Ahearn
- Applicant Address: US NY Rochester
- Assignee: Eastman Kodak Company
- Current Assignee: Eastman Kodak Company
- Current Assignee Address: US NY Rochester
- Agent J. Lanny Tucker
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
An amic acid or amic ester precursor can be applied to a substrate to form a thin film, and is then thermally converted into a semiconducting layer of the corresponding arylene diimide. This semiconducting thin film can be used in various articles including thin-film transistor devices that can be incorporated into a variety of electronic devices. In this manner, the arylene diimide need not be coated onto the substrate but is generated in situ from a solvent-soluble, easily coated precursor compound.
Public/Granted literature
- US20110266523A1 SEMICONDUCTING DEVICES AND METHODS OF PREPARING Public/Granted day:2011-11-03
Information query