Invention Grant
- Patent Title: Magnetic tunnel junction devices, electronic devices including a magnetic tunneling junction device and methods of fabricating the same
- Patent Title (中): 磁隧道结装置，包括磁性隧道接合装置的电子装置及其制造方法
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Application No.: US12923377Application Date: 2010-09-17
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Publication No.: US08411498B2Publication Date: 2013-04-02
- Inventor: Kwang-seok Kim , Kee-won Kim , Sun-ae Seo , Seung-kyo Lee , Young-man Jang
- Applicant: Kwang-seok Kim , Kee-won Kim , Sun-ae Seo , Seung-kyo Lee , Young-man Jang
- Applicant Address: KR Gyeonggi-do KR Gwangju
- Assignee: Samsung Electronics Co., Ltd.,Gwangju Institute of Science and Technology
- Current Assignee: Samsung Electronics Co., Ltd.,Gwangju Institute of Science and Technology
- Current Assignee Address: KR Gyeonggi-do KR Gwangju
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2009-0125036 20091215
- Main IPC: G11C11/14
- IPC: G11C11/14
Abstract:
Perpendicular magnetic tunnel junction (MTJ) devices, methods of fabricating a perpendicular MTJ device, electronic devices including a perpendicular MTJ device and methods of fabricating the electronic device are provided, the perpendicular MTJ devices include a pinned layer, a tunneling layer and a free layer. At least one of the pinned layer and the free layer includes a multi-layered structure including an amorphous perpendicular magnetic anisotropy (PMA) material.
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