Invention Grant
- Patent Title: Flash memory device, memory system and method of operating the same
- Patent Title (中): 闪存设备,存储系统及其操作方法
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Application No.: US13040456Application Date: 2011-03-04
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Publication No.: US08411510B2Publication Date: 2013-04-02
- Inventor: Hong-Rak Son , Han-Woong Yoo , Jun-Jin Kong , Hee-Seok Eun
- Applicant: Hong-Rak Son , Han-Woong Yoo , Jun-Jin Kong , Hee-Seok Eun
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Consulting, PLLC
- Priority: KR10-2010-0019257 20100304
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G06F12/00 ; G06F13/00

Abstract:
A memory system includes a memory device and a data converting device. The memory device includes a memory cell array which includes a plurality of memory cells. The data converting device includes an encoding device. The encoding device converts input data into converted data by changing a bandwidth corresponding to the input data, and provides the converted data to the memory device. Accordingly, the memory system is capable of improving the reliability of programmed data by changing the bandwidth corresponding to data to be programmed. A method of storing data in a memory system is also disclosed.
Public/Granted literature
- US20110216589A1 FLASH MEMORY DEVICE, MEMORY SYSTEM AND METHOD OF OPERATING THE SAME Public/Granted day:2011-09-08
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