Invention Grant
US08411511B2 Reading data from memory cells including storing charges to analog storage devices
有权
从存储单元读取数据，包括将费用存储到模拟存储设备
- Patent Title: Reading data from memory cells including storing charges to analog storage devices
- Patent Title (中): 从存储单元读取数据，包括将费用存储到模拟存储设备
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Application No.: US13301176Application Date: 2011-11-21
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Publication No.: US08411511B2Publication Date: 2013-04-02
- Inventor: Frankie F. Roohparvar
- Applicant: Frankie F. Roohparvar
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
Methods of reading data from memory cells. Such methods include subjecting an analog storage device to a voltage level indicative of a threshold voltage of a memory cell to store a charge to the analog storage device, and generating an analog voltage from the stored charge.
Public/Granted literature
- US20120063225A1 READING DATA FROM MEMORY CELLS INCLUDING STORING CHARGES TO ANALOG STORAGE DEVICES Public/Granted day:2012-03-15
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