Invention Grant
US08411523B2 Reduced current requirements for DRAM self-refresh modes via staggered refresh operations of subsets of memory banks or rows
有权
通过存储器组或行的子集的交错刷新操作,减少DRAM自刷新模式的电流要求
- Patent Title: Reduced current requirements for DRAM self-refresh modes via staggered refresh operations of subsets of memory banks or rows
- Patent Title (中): 通过存储器组或行的子集的交错刷新操作,减少DRAM自刷新模式的电流要求
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Application No.: US12890083Application Date: 2010-09-24
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Publication No.: US08411523B2Publication Date: 2013-04-02
- Inventor: Kuljit S. Bains
- Applicant: Kuljit S. Bains
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
Embodiments of the invention describe systems, methods, and apparatuses to reduce the instantaneous power necessary to execute a DRAM device initiated self-refresh. Embodiments of the invention describe a DRAM device enabled to stagger self-refreshes between a plurality of banks. Staggering self-refreshes between banks reduces the current required for a DRAM self-refresh, thus reducing the amount of current required by the DRAM device.
Public/Granted literature
- US20120079183A1 REDUCED CURRENT REQUIREMENTS FOR DRAM SELF-REFRESH MODES Public/Granted day:2012-03-29
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