In a memory device, an array of memory cells is coupled between a virtual ground node and a supply node. First and second transistors are coupled in source-drain parallel between the virtual ground node and a ground bus. The first transistor is substantially larger than the second transistor. A control circuit provides a first gate signal to a gate of the first transistor and a second gate signal to a gate of the second transistor. The control circuit includes: a configuration memory cell providing a first control signal; an interconnect providing a second control signal; and control logic receiving the first and second control signals and providing the first gate signal. The array of memory cells has three modes responsive to the first and second gate signals, where the three modes include an active mode, a first sleep mode, and a second sleep mode.