Invention Grant
- Patent Title: IMD-selective design of HTS-based filters
- Patent Title (中): 基于HTS的滤波器的IMD选择性设计
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Application No.: US12837544Application Date: 2010-07-16
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Publication No.: US08412292B2Publication Date: 2013-04-02
- Inventor: Yehoshua Dan Agassi , Daniel E. Oates
- Applicant: Yehoshua Dan Agassi , Daniel E. Oates
- Applicant Address: US DC Washington
- Assignee: The United States of America as represented by the Secretary of the Navy
- Current Assignee: The United States of America as represented by the Secretary of the Navy
- Current Assignee Address: US DC Washington
- Agent Howard Kaiser
- Main IPC: H01L39/24
- IPC: H01L39/24 ; H01P1/00

Abstract:
Intermodulation distortion (IMD) is known to be an impediment to progress in superconductor-based filter technology. The present invention's methodology for reducing IMD can open doors to heretofore unseen practical applications involving high temperature superconductor (HTS) filters. Typical inventive practice includes (a) increasing the thickness d, and/or (b) changing the operation temperature T, of the filter's HTS film. The film's thickness d is increased in such a way as to decrease the IMD power PIMD in accordance with the material-independent proportionate relationship PIMD∝1/d1.5-6. The film's operation temperature T is bettered or optimized in accordance with the material-independent proportionate relationship PIMD∝(λO(T))10(K(2)(T))2/(ΔO(T))6, and further in accordance with three individual material-dependent relationships, namely, between operation temperature T and each of linear penetration depth λO, gap maximum ΔO, and kernel K(2). Some inventive embodiments include oxygen overdoping of the film as an additional/alternative IMD-reductive measure.
Public/Granted literature
- US20100285969A1 IMD-Selective Design of HTS-Based Filters Public/Granted day:2010-11-11
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