Invention Grant
- Patent Title: Binary half-tone photolithographic optical apodization mask
- Patent Title (中): 二进制半色调光刻光镂空掩模
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Application No.: US11212749Application Date: 2005-08-29
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Publication No.: US08413080B1Publication Date: 2013-04-02
- Inventor: Stephen F. Somerstein , Martina J. Reale
- Applicant: Stephen F. Somerstein , Martina J. Reale
- Applicant Address: US MD Bethesda
- Assignee: Lockheed Martin Corporation
- Current Assignee: Lockheed Martin Corporation
- Current Assignee Address: US MD Bethesda
- Agency: McDermott Will & Emery LLP
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A method for creating an apodization mask is disclosed. According to the method, a grid is created for the pattern. The grid includes a number of elements. Each element is processed to determine whether the element is to be made transmissive based on a predetermined local optical density and a random value. The predetermined local optical density and the random value are associated with the element. The random value is generated on a random basis. Each element is further processed to determine whether the position of the element is to be shifted. The positional shift is determined on a random basis. The grid with the processed elements is then used to make an apodization mask. The apodization mask may be used in an optical instrument, such as, an interferometer.
Public/Granted literature
- US2585991A Niggerhead Public/Granted day:1952-02-19
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