Invention Grant
US08413604B2 Slotted electrostatic shield modification for improved etch and CVD process uniformity
有权
开槽静电屏蔽改进,以改善蚀刻和CVD工艺均匀性
- Patent Title: Slotted electrostatic shield modification for improved etch and CVD process uniformity
- Patent Title (中): 开槽静电屏蔽改进,以改善蚀刻和CVD工艺均匀性
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Application No.: US11564134Application Date: 2006-11-28
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Publication No.: US08413604B2Publication Date: 2013-04-09
- Inventor: Rene George , Andreas Kadavanich , Daniel J. Devine , Stephen E. Savas , John Zajac , Hongching Shan
- Applicant: Rene George , Andreas Kadavanich , Daniel J. Devine , Stephen E. Savas , John Zajac , Hongching Shan
- Applicant Address: US CA Fremont
- Assignee: Mattson Technology, Inc.
- Current Assignee: Mattson Technology, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Pritzkau Patent Group, LLC
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23F1/00 ; H01L21/306

Abstract:
A more uniform plasma process is implemented for treating a treatment object using an inductively coupled plasma source which produces an asymmetric plasma density pattern at the treatment surface using a slotted electrostatic shield having uniformly spaced-apart slots. The slotted electrostatic shield is modified in a way which compensates for the asymmetric plasma density pattern to provide a modified plasma density pattern at the treatment surface. A more uniform radial plasma process is described in which an electrostatic shield arrangement is configured to replace a given electrostatic shield in a way which provides for producing a modified radial variation characteristic across the treatment surface. The inductively coupled plasma source defines an axis of symmetry and the electrostatic shield arrangement is configured to include a shape that extends through a range of radii relative to the axis of symmetry.
Public/Granted literature
- US20070113979A1 Slotted Electrostatic Shield Modification for Improved Etch and CVD Process Uniformity Public/Granted day:2007-05-24
Information query
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