In this method for manufacturing a silicon single crystal, when growing the silicon single crystal, in order to control the V/G value with high accuracy so as to yield a desired defect-free region, it is important to conduct the pulling at a constant pulling rate. In the method for pulling a silicon single crystal in the present invention, in order to control the V/G value with high accuracy, the distance Δt between the melt surface of the silicon melt and the heat shielding member that is disposed so as to oppose to and to partially cover this melt surface is continuously measured while pulling (growing) the silicon single crystal.