Invention Grant
- Patent Title: Bonding structure and semiconductor device manufacturing apparatus
- Patent Title (中): 接合结构和半导体器件制造装置
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Application No.: US12349682Application Date: 2009-01-07
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Publication No.: US08414704B2Publication Date: 2013-04-09
- Inventor: Tomoyuki Fujii , Taichi Nakamura , Hiroshi Takebayashi
- Applicant: Tomoyuki Fujii , Taichi Nakamura , Hiroshi Takebayashi
- Applicant Address: JP Nagoya
- Assignee: NGK Insulators, Ltd.
- Current Assignee: NGK Insulators, Ltd.
- Current Assignee Address: JP Nagoya
- Agency: Burr & Brown
- Priority: JP2008-001364 20080108; JP2009-001191 20090106
- Main IPC: B32B37/00
- IPC: B32B37/00 ; C23C16/00 ; H01L21/306 ; B23B31/28

Abstract:
The present invention relates to a bonding structure, including: a ceramic member including a hole; a terminal embedded in the ceramic member, an exposed surface exposed to a bottom portion of the hole, and made of a refractory metal having a thermal expansion coefficient substantially equal to a thermal expansion coefficient of the ceramic member; a brazed bond layer including a first tantalum layer in contact with the exposed surface of the terminal, a gold layer formed on the first tantalum layer, and a second tantalum layer formed on the gold layer; and a connecting member inserted in the hole, bonded to the terminal via the brazed bond layer, and made of a refractory metal having a thermal expansion coefficient substantially equal to the thermal expansion coefficient of the ceramic member.
Public/Granted literature
- US20090173448A1 BONDING STRUCTURE AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS Public/Granted day:2009-07-09
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