Invention Grant
- Patent Title: Plasma reactor with tiltable overhead RF inductive source
- Patent Title (中): 具有可倾斜架空RF感应源的等离子体电抗器
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Application No.: US12787198Application Date: 2010-05-25
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Publication No.: US08414736B2Publication Date: 2013-04-09
- Inventor: Kenneth S. Collins , Andrew Nguyen , Martin Jeffrey Salinas , Imad Yousif , Ming Xu
- Applicant: Kenneth S. Collins , Andrew Nguyen , Martin Jeffrey Salinas , Imad Yousif , Ming Xu
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agent Robert M. Wallace
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23F1/00 ; H01L21/306 ; H01J7/24 ; H05B31/26
Abstract:
Correction of skew in plasma etch rate distribution is performed by tilting the overhead RF source power applicator about a tilt axis whose angle is determined from skew in processing data. Complete freedom of movement is provided by incorporating exactly three axial motion servos supporting a floating plate from which the overhead RF source power applicator is suspended.
Public/Granted literature
- US20110048644A1 PLASMA REACTOR WITH TILTABLE OVERHEAD RF INDUCTIVE SOURCE Public/Granted day:2011-03-03
Information query
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