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US08414789B2 Method and composition for chemical mechanical planarization of a metal 有权
金属化学机械平面化的方法和组成

Method and composition for chemical mechanical planarization of a metal
Abstract:
A composition and associated method for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) are described herein which afford high and tunable rates of metal removal as well as low within a wafer non-uniformity values and low residue levels remaining after polishing.
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