Invention Grant
- Patent Title: Inspection method and manufacturing method of light-emitting device
- Patent Title (中): 发光装置的检查方法和制造方法
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Application No.: US12841394Application Date: 2010-07-22
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Publication No.: US08415174B2Publication Date: 2013-04-09
- Inventor: Koichiro Tanaka
- Applicant: Koichiro Tanaka
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2009-175377 20090728
- Main IPC: H01L21/66
- IPC: H01L21/66

Abstract:
In a light-emitting element provided with a thick layer of a plurality of EL layers which are partitioned by a charge generation layer between a pair of electrodes, a portion which a conductive foreign substance enters between the pair of electrodes emits stronger light at a voltage lower than a voltage required when a normal portion starts emitting light. In a light-emitting element provided with a plurality of EL layers which are partitioned by a charge generation layer between a pair of electrodes, a voltage may be applied thereto in the forward direction. Then, an abnormal light-emission portion may be detected because the portion emits light at a luminance of 1 (cd/m2) or higher when the applied voltage is lower than a voltage required when a normal portion starts emitting light. The portion may be irradiated with laser light so as to be insulated.
Public/Granted literature
- US20110027918A1 INSPECTION METHOD AND MANUFACTURING METHOD OF LIGHT-EMITTING DEVICE Public/Granted day:2011-02-03
Information query
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