Invention Grant
- Patent Title: Method of super flat chemical mechanical polishing technology and semiconductor elements produced thereof
- Patent Title (中): 超平面化学机械抛光技术的方法及其制造的半导体元件
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Application No.: US11891466Application Date: 2007-08-10
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Publication No.: US08415186B2Publication Date: 2013-04-09
- Inventor: Yong Cai , Hung-Shen Chu
- Applicant: Yong Cai , Hung-Shen Chu
- Applicant Address: CN Shatin, New Territories, Hong Kong
- Assignee: Hong Kong Applied Science and Technology Research Institute Co. Ltd.
- Current Assignee: Hong Kong Applied Science and Technology Research Institute Co. Ltd.
- Current Assignee Address: CN Shatin, New Territories, Hong Kong
- Agency: Merchant & Gould P.C.
- Priority: CN200710080281 20070216
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L33/00
Abstract:
The present invention provides a method of super flat chemical mechanical polishing (SF-CMP) technology, which is a method characterized in replacing laser lift-off in a semiconductor fabricating process. SF-CMP has a main step of planting a plurality of polishing stop points before polishing the surface, which is characterized by hardness of the polishing stop points material being larger than hardness of the surface material. Therefore, the present method can achieve super flat polishing surface without removing polishing stop points.
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