Invention Grant
- Patent Title: Large-grain crystalline thin-film structures and devices and methods for forming the same
- Patent Title (中): 大晶粒结晶薄膜结构及其形成装置及方法
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Application No.: US12695408Application Date: 2010-01-28
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Publication No.: US08415187B2Publication Date: 2013-04-09
- Inventor: Leslie G. Fritzemeier , Christopher J. Vineis
- Applicant: Leslie G. Fritzemeier , Christopher J. Vineis
- Applicant Address: US CA San Jose
- Assignee: Solexant Corporation
- Current Assignee: Solexant Corporation
- Current Assignee Address: US CA San Jose
- Agency: Bingham McCutchen LLP
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Methods for forming semiconductor devices include providing a crystalline template having an initial grain size, annealing the crystalline template, the annealed template having a final grain size larger than the initial grain size, forming a buffer layer over the annealed template, and forming a semiconductor layer over the buffer layer.
Public/Granted literature
- US20100193795A1 LARGE-GRAIN CRYSTALLINE THIN-FILM STRUCTURES AND DEVICES AND METHODS FOR FORMING THE SAME Public/Granted day:2010-08-05
Information query
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