Invention Grant
US08415198B2 Production method of thin film transistor using amorphous oxide semiconductor film
有权
使用非晶氧化物半导体膜的薄膜晶体管的制造方法
- Patent Title: Production method of thin film transistor using amorphous oxide semiconductor film
- Patent Title (中): 使用非晶氧化物半导体膜的薄膜晶体管的制造方法
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Application No.: US12374665Application Date: 2007-07-26
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Publication No.: US08415198B2Publication Date: 2013-04-09
- Inventor: Naho Itagaki , Toru Den , Nobuyuki Kaji , Ryo Hayashi , Masafumi Sano
- Applicant: Naho Itagaki , Toru Den , Nobuyuki Kaji , Ryo Hayashi , Masafumi Sano
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2006-226698 20060823
- International Application: PCT/JP2007/065114 WO 20070726
- International Announcement: WO2008/023553 WO 20080228
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A production method of a thin film transistor including an active layer including an amorphous oxide semiconductor film, wherein a step of forming the active layer includes a first step of forming the oxide film in an atmosphere having an introduced oxygen partial pressure of 1×10−3 Pa or less, and a second step of annealing the oxide film in an oxidative atmosphere after the first step.
Public/Granted literature
- US20090325341A1 PRODUCTION METHOD OF THIN FILM TRANSISTOR USING AMORPHOUS OXIDE SEMICONDUCTOR FILM Public/Granted day:2009-12-31
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