Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US13050050Application Date: 2011-03-17
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Publication No.: US08415202B2Publication Date: 2013-04-09
- Inventor: Takayuki Ohba
- Applicant: Takayuki Ohba
- Applicant Address: JP Tokyo
- Assignee: The University of Tokyo
- Current Assignee: The University of Tokyo
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2008-240015 20080918
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A semiconductor device manufacturing method of stacking semiconductor chips in layers over a semiconductor substrate having, close to its main surface, semiconductor chips, connecting semiconductor chips in different layers to enable signal transmission, and singularizing the layered semiconductor chips into pieces. The method includes steps of forming an insulating layer on the main surface of the semiconductor substrate; stacking the semiconductor chips over the semiconductor chips of the semiconductor substrate in such a manner as to interpose the insulating layer between them and an opposite surface of each disposed semiconductor chip opposes the insulating layer, the opposite surface being opposite to the main surface; forming, in each of the disposed semiconductor chips, a via hole penetrating from the main to the opposite surface; and forming a connection which enables signal transmission between the disposed semiconductor chips and the corresponding semiconductor chips of the semiconductor substrate via the via holes.
Public/Granted literature
- US20110165730A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2011-07-07
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