Method of manufacturing a complementary nanowire tunnel field effect transistor semiconductor device

Invention Grant

US08415209B2 Method of manufacturing a complementary nanowire tunnel field effect transistor semiconductor device 有权

Title translation: 互补纳米线隧道场效应晶体管半导体器件的制造方法

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Patent Title: Method of manufacturing a complementary nanowire tunnel field effect transistor semiconductor device
Patent Title (中): 互补纳米线隧道场效应晶体管半导体器件的制造方法
Application No.: US13083387

Application Date: 2011-04-08
Publication No.: US08415209B2

Publication Date: 2013-04-09
Inventor: Rita Rooyackers , Daniele Leonelli , Anne Vandooren , Anne S. Verhulst , Roger Loo , Stefan De Gendt
Applicant: Rita Rooyackers , Daniele Leonelli , Anne Vandooren , Anne S. Verhulst , Roger Loo , Stefan De Gendt
Applicant Address: BE Leuven BE Leuven
Assignee: IMEC,Katholieke Universiteit Leuven, K.U. Leuven R&D
Current Assignee: IMEC,Katholieke Universiteit Leuven, K.U. Leuven R&D
Current Assignee Address: BE Leuven BE Leuven
Agency: Knobbe Martens Olson & Bear, LLP
Priority: EP10160382 20100419
Main IPC: H01L21/84
IPC: H01L21/84

Method of manufacturing a complementary nanowire tunnel field effect transistor semiconductor device

Abstract:

The present disclosure provides a method for manufacturing at least one nanowire Tunnel Field Effect Transistor (TFET) semiconductor device. The method comprises providing a stack comprising a layer of channel material with on top thereof a layer of sacrificial material, removing material from the stack so as to form at least one nanowire from the layer of channel material and the layer of sacrificial material, and replacing the sacrificial material in the at least one nanowire by heterojunction material. A method according to embodiments of the present disclosure is advantageous as it enables easy manufacturing of complementary TFETs.

Abstract(Chinese):

本公开提供了一种用于制造至少一个纳米线隧道场效应晶体管（TFET）半导体器件的方法。该方法包括提供包括沟道材料层的堆叠，其顶部具有牺牲材料层，从堆叠中去除材料，以便从沟道材料层和牺牲材料层形成至少一个纳米线，并且代替通过异质结材料在至少一个纳米线中的牺牲材料。根据本公开的实施例的方法是有利的，因为其能够容易地制造互补的TFET。

Public/Granted literature

US20110253981A1 METHOD OF MANUFACTURING A VERTICAL TFET Public/Granted day:2011-10-20

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/84	.....衬底不是半导体的，例如绝缘体