Invention Grant
- Patent Title: High performance dielectric stack for DRAM capacitor
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Application No.: US13220460Application Date: 2011-08-29
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Publication No.: US08415227B2Publication Date: 2013-04-09
- Inventor: Sandra Malhotra , Wim Deweerd , Hanhong Chen , Xiangxin Rui , Hiroyuki Ode , Mitsuhiro Horikawa , Kenichi Koyanagi
- Applicant: Sandra Malhotra , Wim Deweerd , Hanhong Chen , Xiangxin Rui , Hiroyuki Ode , Mitsuhiro Horikawa , Kenichi Koyanagi
- Applicant Address: US CA San Jose JP Tokyo
- Assignee: Intermolecular, Inc.,Elpida Memory, Inc.
- Current Assignee: Intermolecular, Inc.,Elpida Memory, Inc.
- Current Assignee Address: US CA San Jose JP Tokyo
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/31
Abstract:
A method for fabricating a DRAM capacitor stack is described wherein the dielectric material is a multi-layer stack formed from a highly-doped material combined with a lightly or non-doped material. The highly-doped material remains amorphous with a crystalline content of less than 30% after an annealing step. The lightly or non-doped material becomes crystalline with a crystalline content of equal to or greater than 30% after an annealing step. The dielectric multi-layer stack maintains a high k-value while minimizing the leakage current and the EOT value.
Public/Granted literature
- US20130052792A1 HIGH PERFORMANCE DIELECTRIC STACK FOR DRAM CAPACITOR Public/Granted day:2013-02-28
Information query
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