Invention Grant
- Patent Title: Photovoltaic device and method for manufacturing the same
- Patent Title (中): 光伏器件及其制造方法
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Application No.: US13213636Application Date: 2011-08-19
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Publication No.: US08415231B2Publication Date: 2013-04-09
- Inventor: Shunpei Yamazaki , Yasuyuki Arai
- Applicant: Shunpei Yamazaki , Yasuyuki Arai
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2007-106591 20070413
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46

Abstract:
A photovoltaic device uses a single crystal or polycrystalline semiconductor layer which is separated from a single crystal or polycrystalline semiconductor substrate as a photoelectric conversion layer and has a SOI structure in which the semiconductor layer is bonded to a substrate having an insulating surface or an insulating substrate. A single crystal semiconductor layer which is a separated surface layer part of a single crystal semiconductor substrate and is transferred is used as a photoelectric conversion layer and includes an impurity semiconductor layer to which hydrogen or halogen is added on a light incidence surface or on an opposite surface. The semiconductor layer is fixed to a substrate having an insulating surface or an insulating substrate.
Public/Granted literature
- US20110306162A1 PHOTOVOLTAIC DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2011-12-15
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