Invention Grant
- Patent Title: Method of manufacturing semiconductor device and semiconductor device
- Patent Title (中): 制造半导体器件和半导体器件的方法
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Application No.: US12878228Application Date: 2010-09-09
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Publication No.: US08415245B2Publication Date: 2013-04-09
- Inventor: Yasuki Takata , Kaori Sumitomo , Hiroshi Horibe , Hideyuki Arakawa
- Applicant: Yasuki Takata , Kaori Sumitomo , Hiroshi Horibe , Hideyuki Arakawa
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: McDermott Will & Emery LLP
- Priority: JP2009-207952 20090909; JP2010-124207 20100531
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
Height control of a capillary is performed in a stitch bonding (2nd bond) in a wire bonding, so that a thickness of a stitch portion can be controlled, thereby ensuring a bonding strength at the stitch portion and achieving an improvement in a bonding reliability. Also, the stitch portion has a thick portion, and a wire and a part (α portion) of a bonding region of an inner lead is formed to a lower portion of the thick portion, thereby sufficiently ensuring a thickness of the stitch portion and a bonding region.
Public/Granted literature
- US20110057299A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE Public/Granted day:2011-03-10
Information query
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