Invention Grant
US08415248B2 Self-aligned dual damascene BEOL structures with patternable low-k material and methods of forming same
有权
具有可编程低k材料的自对准双镶嵌BEOL结构及其形成方法
- Patent Title: Self-aligned dual damascene BEOL structures with patternable low-k material and methods of forming same
- Patent Title (中): 具有可编程低k材料的自对准双镶嵌BEOL结构及其形成方法
-
Application No.: US13474349Application Date: 2012-05-17
-
Publication No.: US08415248B2Publication Date: 2013-04-09
- Inventor: Shyng-Tsong Chen , Qinghuang Lin , Sampath Purushothaman , Terry A. Spooner , Shawn M. Walsh
- Applicant: Shyng-Tsong Chen , Qinghuang Lin , Sampath Purushothaman , Terry A. Spooner , Shawn M. Walsh
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Daniel P. Morris, Esq.
- Main IPC: H01L21/4763
- IPC: H01L21/4763
Abstract:
A self-aligned interconnect structure is provided that includes a first patterned and cured low-k material located on a surface of a substrate, wherein the first patterned and cured low-k material includes at least one first interconnect pattern (via or trench pattern) therein. A second patterned and cured low-k material having at least one second interconnect pattern that is different from the first interconnect pattern is located atop the first patterned and cured low k material. A portion of the second patterned and cured low-k material partially fills the at least one first interconnect within the first patterned and cured low-k material. A conductive material fills the at least one first interconnect pattern and the at least one second interconnect pattern. A method of forming such a self-aligned interconnect structure is also provided.
Public/Granted literature
- US20120231622A1 SELF-ALIGNED DUAL DAMASCENE BEOL STRUCTURES WITH PATTERNABLE LOW- K MATERIAL AND METHODS OF FORMING SAME Public/Granted day:2012-09-13
Information query
IPC分类:
