Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US13189841Application Date: 2011-07-25
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Publication No.: US08415249B2Publication Date: 2013-04-09
- Inventor: Masahiro Nishi
- Applicant: Masahiro Nishi
- Applicant Address: JP Yokohama-shi, Kanagawa
- Assignee: Sumitomo Electric Device Innovations, Inc.
- Current Assignee: Sumitomo Electric Device Innovations, Inc.
- Current Assignee Address: JP Yokohama-shi, Kanagawa
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2010-167386 20100726
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method of manufacturing a semiconductor device includes: forming a lower electrode layer in contact with a surface of a nitride semiconductor layer; forming an Al layer on the lower electrode layer; performing a heat treatment after the formation of the Al layer; removing the Al layer after the heat treatment is performed; and forming an upper electrode layer on the lower electrode layer after the removal of the Al layer.
Public/Granted literature
- US20120021582A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2012-01-26
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