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US08415255B2 Pore sealing and cleaning porous low dielectric constant structures 有权
孔隙密封和清洗多孔低介电常数结构

  • Patent Title: Pore sealing and cleaning porous low dielectric constant structures
  • Patent Title (中): 孔隙密封和清洗多孔低介电常数结构
  • Application No.: US12063010
    Application Date: 2005-08-05
  • Publication No.: US08415255B2
    Publication Date: 2013-04-09
  • Inventor: Balgovind Sharma
  • Applicant: Balgovind Sharma
  • Applicant Address: US TX Austin
  • Assignee: Freescale Semiconductor, Inc.
  • Current Assignee: Freescale Semiconductor, Inc.
  • Current Assignee Address: US TX Austin
  • International Application: PCT/EP2005/010048 WO 20050805
  • International Announcement: WO2007/016968 WO 20070215
  • Main IPC: H01L21/469
  • IPC: H01L21/469
Pore sealing and cleaning porous low dielectric constant structures
Abstract:
A micellar solution is used to seal pores exposed at the bottom and sidewall surfaces of a structure etched in or through a porous low dielectric constant material. The micellar solution is also effective to clean away etch residues from the etched structure.
Abstract(Chinese):

使用胶束溶液来密封暴露在蚀刻在多孔低介电常数材料中或通过多孔低介电常数材料的结构的底部和侧壁表面的孔。 胶束溶液也有效地清除蚀刻残留物的蚀刻结构。

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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02 .半导体器件或其部件的制造或处理
H01L21/04 ..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34 ...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46 ....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461 .....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/469 ......在半导体材料上形成绝缘层的，例如，用于掩膜的或应用光刻技术的（密封层入H01L21/56）以及这些层的后处理
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