Invention Grant
US08415559B2 Method for forming copper indium gallium chalcogenide layer with shaped gallium profile
失效
用于形成具有形状镓型材的铜铟镓硫族化物层的方法
- Patent Title: Method for forming copper indium gallium chalcogenide layer with shaped gallium profile
- Patent Title (中): 用于形成具有形状镓型材的铜铟镓硫族化物层的方法
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Application No.: US12414029Application Date: 2009-03-30
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Publication No.: US08415559B2Publication Date: 2013-04-09
- Inventor: Bulent M. Basol
- Applicant: Bulent M. Basol
- Applicant Address: US CA San Jose
- Assignee: SoloPower, Inc.
- Current Assignee: SoloPower, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: H01L31/00
- IPC: H01L31/00
Abstract:
Precursor layers and methods of forming Group IBIIIAVIA solar cell absorbers with bandgap grading using such precursor layers are described. The Group IBIIIAVIA absorber includes a top surface with a Ga/(Ga+In) molar ratio in the range of 0.1-0.3. The Group IBIIIAVIA solar cell absorber is formed by reacting the layers of a multilayer material structure which includes a metallic film including Cu, In and Ga formed on a base, a layer of Se formed on the metallic film, and a second metallic layer substantially including Ga formed on the layer of Se.
Public/Granted literature
- US20090226717A1 METHOD FOR FORMING COPPER INDIUM GALLIUM CHALCOGENIDE LAYER WITH SHAPED GALLIUM PROFILE Public/Granted day:2009-09-10
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