Invention Grant
US08415620B2 Determining doping type and level in semiconducting nanostructures
失效
确定半导体纳米结构中的掺杂类型和水平
- Patent Title: Determining doping type and level in semiconducting nanostructures
- Patent Title (中): 确定半导体纳米结构中的掺杂类型和水平
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Application No.: US12685129Application Date: 2010-01-11
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Publication No.: US08415620B2Publication Date: 2013-04-09
- Inventor: Richard A. Haight
- Applicant: Richard A. Haight
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01J47/00
- IPC: H01J47/00
Abstract:
Systems and methods for determining doping type and level in semiconducting nanostructures include generating light from a laser source, directing the light on the device via an extended microscope, collecting electrons emitted from the device in an electron analyzer and calculating the doping type and level of the device.
Public/Granted literature
- US20110168885A1 DETERMINING DOPING TYPE AND LEVEL IN SEMICONDUCTING NANOSTRUCTURES Public/Granted day:2011-07-14
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