The present disclosure relates to a semiconductor light-emitting device which includes: a light-emitting layer composed of an active layer and of barrier layers formed as superlattice layers and disposed on and under the active layer to relieve stresses applied to the active layer and reduce the sum of electric fields generated in the active layer by the spontaneous polarization and the piezoelectric effect; an N-type contact layer injecting electrons into the light-emitting layer; and a P-type contact layer disposed opposite to the N-type contact layer with respect to the light-emitting layer and injecting holes into the light-emitting layer, wherein the active layer contains InGaN, and the barrier layers are formed by alternately stacking of an AlGaN thin film and an InGaN thin film.