Invention Grant
US08415671B2 Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices
有权
在其栅极沟槽下具有异质结的宽带隙MOSFET以及形成这种器件的相关方法
- Patent Title: Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices
- Patent Title (中): 在其栅极沟槽下具有异质结的宽带隙MOSFET以及形成这种器件的相关方法
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Application No.: US12761518Application Date: 2010-04-16
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Publication No.: US08415671B2Publication Date: 2013-04-09
- Inventor: Qingchun Zhang
- Applicant: Qingchun Zhang
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel Sibley & Sajovec
- Main IPC: H01L29/772
- IPC: H01L29/772 ; H01L21/336 ; H01L29/24 ; H01L21/331
Abstract:
Semiconductor switching devices include a first wide band-gap semiconductor layer having a first conductivity type. First and second wide band-gap well regions that have a second conductivity type that is opposite the first conductivity type are provided on the first wide band-gap semiconductor layer. A non-wide band-gap semiconductor layer having the second conductivity type is provided on the first wide band-gap semiconductor layer. First and second wide band-gap source/drain regions that have the first conductivity type are provided on the first wide band-gap well region. A gate insulation layer is provided on the non-wide band-gap semiconductor layer, and a gate electrode is provided on the gate insulation layer.
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