Invention Grant
- Patent Title: Thin film transistor and semiconductor layer
- Patent Title (中): 薄膜晶体管和半导体层
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Application No.: US13130141Application Date: 2009-11-02
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Publication No.: US08415673B2Publication Date: 2013-04-09
- Inventor: Hiroaki Furukawa
- Applicant: Hiroaki Furukawa
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Nixon & Vanderhye, P.C.
- Priority: JP2008-297296 20081120
- International Application: PCT/JP2009/005824 WO 20091102
- International Announcement: WO2010/058528 WO 20100527
- Main IPC: H01L31/112
- IPC: H01L31/112 ; H01L29/04
Abstract:
A semiconductor layer (100) according to the present invention includes a top surface (100o), a bottom surface (100u) and a side surface (100s). In a portion of the side surface (100s) which is in the vicinity of a border with the top surface (100o), a tangential line (T1) to the portion is inclined with respect to the normal to the bottom surface (100u). In a certain portion of the side surface (100s) which is farther from the top surface (100o) than the portion in the vicinity of the border, an angle made by a tangential line (T2) to the certain portion and a plane defined by the bottom surface (100u) is larger than an angle made by the tangential line (T1) to the portion in the vicinity of the border and the plane defined by the bottom surface (100u).
Public/Granted literature
- US20110220894A1 SEMICONDUCTOR LAYER AND METHOD FOR FORMING SAME Public/Granted day:2011-09-15
Information query
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