Invention Grant
- Patent Title: Epitaxial substrate for semiconductor element, semiconductor element, and method for producing epitaxial substrate for semiconductor element
- Patent Title (中): 半导体元件用外延基板，半导体元件及半导体元件用外延基板的制造方法
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Application No.: US13457931Application Date: 2012-04-27
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Publication No.: US08415690B2Publication Date: 2013-04-09
- Inventor: Makoto Miyoshi , Shigeaki Sumiya , Mikiya Ichimura , Mitsuhiro Tanaka
- Applicant: Makoto Miyoshi , Shigeaki Sumiya , Mikiya Ichimura , Mitsuhiro Tanaka
- Applicant Address: JP Nagoya
- Assignee: NGK Insulators, Ltd.
- Current Assignee: NGK Insulators, Ltd.
- Current Assignee Address: JP Nagoya
- Agency: Burr & Brown
- Priority: JP2009-254857 20091106
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L21/00
Abstract:
Provided is an epitaxial substrate using a silicon substrate as a base substrate. An epitaxial substrate, in which a group of group-III nitride layers are formed on a (111) single crystal Si substrate such that a (0001) crystal plane of the group of group-III nitride layers is substantially in parallel with a surface of the substrate, includes: a first group-III nitride layer made of AlN with many defects configured of at least one kind from a columnar or granular crystal or domain; a second group-III nitride layer whose interface with the first group-III nitride layer is shaped into a three-dimensional concave-convex surface; and a third group-III nitride layer epitaxially formed on the second group-III nitride layer as a graded composition layer in which the proportion of existence of Al is smaller in a portion closer to a fourth group-III nitride.
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