Invention Grant
- Patent Title: Light emitting semiconductor device and method of manufacture thereof
- Patent Title (中): 发光半导体器件及其制造方法
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Application No.: US12695163Application Date: 2010-01-28
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Publication No.: US08415693B2Publication Date: 2013-04-09
- Inventor: Mototaka Inobe , Motokazu Yamada , Kazuhiro Kamada
- Applicant: Mototaka Inobe , Motokazu Yamada , Kazuhiro Kamada
- Applicant Address: JP Anan-shi
- Assignee: Nichia Corporation
- Current Assignee: Nichia Corporation
- Current Assignee Address: JP Anan-shi
- Agency: Ditthavong Mori & Steiner, P.C.
- Priority: JP2009-19412 20090130; JP2009-268587 20091126
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
The light emitting device has a substrate, metallization including silver established on the surface of the substrate, a light emitting element mounted on the substrate, conducting wire that electrically connects the metallization and the light emitting element, light reflective resin provided on the substrate to reflect light from the light emitting element, and insulating material that covers at least part of the metallization surfaces. The insulating material is established to come in contact with the side of the light emitting element. This arrangement can suppress the leakage of light emitting element light from the substrate, and can achieve a light emitting device with high light extraction efficiency.
Public/Granted literature
- US20100193822A1 LIGHT EMITTING SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF Public/Granted day:2010-08-05
Information query
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