Invention Grant
- Patent Title: Nitride based semiconductor light-emitting device
- Patent Title (中): 氮化物基半导体发光器件
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Application No.: US12911320Application Date: 2010-10-25
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Publication No.: US08415708B2Publication Date: 2013-04-09
- Inventor: Je Won Kim , Jeong Tak Oh , Dong Joon Kim , Sun Woon Kim , Jin Sub Park , Kyu Han Lee
- Applicant: Je Won Kim , Jeong Tak Oh , Dong Joon Kim , Sun Woon Kim , Jin Sub Park , Kyu Han Lee
- Applicant Address: KR Seoul
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: McDermott Will & Emery LLP
- Priority: KR2004-10538 20040218
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0
Public/Granted literature
- US20110037086A1 NITRIDE BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE Public/Granted day:2011-02-17
Information query
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