Invention Grant
US08415710B2 Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method
有权
双极性功率半导体元件包括p型发射极和p型发射极中较高掺杂的区域，以及制造方法
- Patent Title: Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method
- Patent Title (中): 双极性功率半导体元件包括p型发射极和p型发射极中较高掺杂的区域，以及制造方法
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Application No.: US13022386Application Date: 2011-02-07
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Publication No.: US08415710B2Publication Date: 2013-04-09
- Inventor: Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
- Applicant: Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Maginot, Moore & Beck
- Priority: DE102006001252 20060110
- Main IPC: H01L29/74
- IPC: H01L29/74
Abstract:
A bipolar power semiconductor component configured as an IGBT includes a semiconductor body, in which a p-doped emitter, an n-doped base, a p-doped base and an n-doped main emitter are arranged successively in a vertical direction. The p-doped emitter has a number of heavily p-doped zones having a locally increased p-type doping.
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