Invention Grant
- Patent Title: Discrete trap non-volatile multi-functional memory device
- Patent Title (中): 离散陷阱非易失性多功能存储设备
-
Application No.: US13415408Application Date: 2012-03-08
-
Publication No.: US08415715B2Publication Date: 2013-04-09
- Inventor: Arup Bhattacharyya
- Applicant: Arup Bhattacharyya
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: H01L27/148
- IPC: H01L27/148
Abstract:
A multiple layer tunnel insulator is fabricated between a substrate and a discrete trap layer. The properties of the multiple layers determines the volatility of the memory device. The composition of each layer and/or the quantity of layers is adjusted to fabricate either a DRAM device, a non-volatile memory device, or both simultaneously.
Public/Granted literature
- US20120161223A1 DISCRETE TRAP NON-VOLATILE MULTI-FUNCTIONAL MEMORY DEVICE Public/Granted day:2012-06-28
Information query
IPC分类:
