Invention Grant
US08415727B2 Backside-illuminated (BSI) image sensor with backside diffusion doping
有权
带背面扩散掺杂的背面照明(BSI)图像传感器
- Patent Title: Backside-illuminated (BSI) image sensor with backside diffusion doping
- Patent Title (中): 带背面扩散掺杂的背面照明(BSI)图像传感器
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Application No.: US13198574Application Date: 2011-08-04
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Publication No.: US08415727B2Publication Date: 2013-04-09
- Inventor: Sohei Manabe
- Applicant: Sohei Manabe
- Applicant Address: US CA Santa Clara
- Assignee: OmniVision Technologies, Inc.
- Current Assignee: OmniVision Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely Sokoloff Taylor & Zafman LLP
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
Embodiments of a process comprising forming a pixel on a front side of a substrate, thinning the substrate, depositing a doped silicon layer on a backside of the thinned substrate, and diffusing a dopant from the doped silicon layer into the substrate. Embodiments of an apparatus comprising a pixel formed on a front side of a thinned substrate, a doped silicon layer formed on a backside of the thinned substrate, and a region in the thinned substrate, and near the backside, where a dopant has diffused from the doped silicon layer into the thinned substrate. Other embodiments are disclosed and claimed.
Public/Granted literature
- US20110284982A1 BACKSIDE-ILLUMINATED (BSI) IMAGE SENSOR WITH BACKSIDE DIFFUSION DOPING Public/Granted day:2011-11-24
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