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US08415727B2 Backside-illuminated (BSI) image sensor with backside diffusion doping 有权
带背面扩散掺杂的背面照明(BSI)图像传感器

Backside-illuminated (BSI) image sensor with backside diffusion doping
Abstract:
Embodiments of a process comprising forming a pixel on a front side of a substrate, thinning the substrate, depositing a doped silicon layer on a backside of the thinned substrate, and diffusing a dopant from the doped silicon layer into the substrate. Embodiments of an apparatus comprising a pixel formed on a front side of a thinned substrate, a doped silicon layer formed on a backside of the thinned substrate, and a region in the thinned substrate, and near the backside, where a dopant has diffused from the doped silicon layer into the thinned substrate. Other embodiments are disclosed and claimed.
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