Invention Grant
- Patent Title: Semiconductor component and method of manufacture
- Patent Title (中): 半导体元件及制造方法
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Application No.: US12271106Application Date: 2008-11-14
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Publication No.: US08415739B2Publication Date: 2013-04-09
- Inventor: Prasad Venkatraman , Zia Hossain
- Applicant: Prasad Venkatraman , Zia Hossain
- Applicant Address: US AZ Phoenix
- Assignee: Semiconductor Components Industries, LLC
- Current Assignee: Semiconductor Components Industries, LLC
- Current Assignee Address: US AZ Phoenix
- Agent Rennie Dover
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A semiconductor component that includes an edge termination structure and a method of manufacturing the semiconductor component. A semiconductor material has a semiconductor device region and an edge termination region. One or more device trenches may be formed in the semiconductor device region and one or more termination trenches is formed in the edge termination region. A source electrode is formed in a portion of a termination trench adjacent its floor and a floating electrode termination structure is formed in the portion of the termination trench adjacent its mouth. A second termination trench may be formed in the edge termination region and a non-floating electrode may be formed in the second termination trench. Alternatively, the second termination trench may be omitted and a trench-less non-floating electrode may be formed in the edge termination region.
Public/Granted literature
- US20100123189A1 SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURE Public/Granted day:2010-05-20
Information query
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