Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13358526Application Date: 2012-01-26
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Publication No.: US08415740B2Publication Date: 2013-04-09
- Inventor: Atsushi Kaneko
- Applicant: Atsushi Kaneko
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2008-297030 20081120
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78
Abstract:
Provided is a method of manufacturing a semiconductor device, that buried gate electrodes are formed in a pair of trenches in a substrate, so as to be recessed from the level of the top end of the trenches, a base region is formed between a predetermined region located between the pair of trenches, and a source region is formed over the base region.
Public/Granted literature
- US20120126316A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-05-24
Information query
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