- Patent Title: Thin-film semiconductor device, lateral bipolar thin-film transistor, hybrid thin-film transistor, MOS thin-film transistor, and method of fabricating thin-film transistor
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Application No.: US13149511Application Date: 2011-05-31
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Publication No.: US08415746B2Publication Date: 2013-04-09
- Inventor: Genshiro Kawachi
- Applicant: Genshiro Kawachi
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Priority: JP2006-175473 20060626
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/43
Abstract:
In a lateral bipolar transistor including an emitter, a base and a collector which are formed in a semiconductor thin film formed on an insulating substrate, the semiconductor thin film is a semiconductor thin film which is crystallized in a predetermined direction. In addition, in a MOS-bipolar hybrid transistor formed in a semiconductor thin film formed on an insulating substrate, the semiconductor thin film is a semiconductor thin film which is crystallized in a predetermined direction.
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