Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12685415Application Date: 2010-01-11
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Publication No.: US08415750B2Publication Date: 2013-04-09
- Inventor: Kazutaka Akiyama
- Applicant: Kazutaka Akiyama
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2009-175310 20090728
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A semiconductor device according to one embodiment includes: a semiconductor substrate; an element isolation insulating film embedded in the vicinity of a front surface of the semiconductor substrate; a through plug penetrating the semiconductor substrate from a back surface to the front surface so as to penetrate through the element isolation insulating film, and having a multi-stage structure comprising an upper stage portion and a lower stage portion, the upper stage portion having a region surrounded by the element isolation insulating film in the semiconductor substrate, the lower stage portion having a diameter larger than that of the upper stage portion; and a contact plug connected to an end portion of the through plug on the frond surface side of the semiconductor substrate for connecting a conductive member formed above the front surface side of the semiconductor substrate to the through plug.
Public/Granted literature
- US20110024849A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2011-02-03
Information query
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