Invention Grant
- Patent Title: Wheatstone-bridge magnetoresistive device
- Patent Title (中): 惠斯通电桥磁阻器件
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Application No.: US11860737Application Date: 2007-09-25
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Publication No.: US08415755B2Publication Date: 2013-04-09
- Inventor: Fernando J. Castano , Caroline A. Ross
- Applicant: Fernando J. Castano , Caroline A. Ross
- Applicant Address: US MA Cambridge
- Assignee: Massachusetts Institute of Technology
- Current Assignee: Massachusetts Institute of Technology
- Current Assignee Address: US MA Cambridge
- Agency: Gesmer Updegrove LLP
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L21/02

Abstract:
A magnetoresistive Wheatstone-bridge structure includes a magnetoresistive ring structure. The magnetoresistive ring structure includes a first magnetic layer comprising a ferromagnetic material. A second magnetic layer also includes a ferromagnetic material. A non-magnetic spacer is positioned between the first magnetic layer and the second magnetic layer. A vacant open region is positioned in the center region of the magnetoresistive ring structure. A plurality of magnetic states can exist in either the first magnetic layer or second magnetic layer. Furthermore, the magnetoresistive Wheatstone-bridge structure includes a plurality of voltage and current contacts arranged symmetrically upon the magnetoresistive ring structure. The magnetic state of the ring is detected by measuring its resistance.
Public/Granted literature
- US20080074224A1 WHEATSTONE-BRIDGE MAGNETORESISTIVE DEVICE Public/Granted day:2008-03-27
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