Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12870486Application Date: 2010-08-27
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Publication No.: US08415756B2Publication Date: 2013-04-09
- Inventor: Keisuke Tsukamoto , Shinya Hirano , Yuichiro Fujiyama , Tatsunori Murata
- Applicant: Keisuke Tsukamoto , Shinya Hirano , Yuichiro Fujiyama , Tatsunori Murata
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: McDermott Will & Emery LLP
- Priority: JP2009-198181 20090828
- Main IPC: H01L29/82
- IPC: H01L29/82
Abstract:
There are provided a semiconductor device in which short circuit failures in magnetic resistor elements and the like are reduced, and a method of manufacturing the same. An interlayer insulating film in which memory cells are formed is formed such that the upper surface of the portion of the interlayer insulating film located in a memory cell region where the magnetic resistor elements are formed is at a position lower than that of the upper surface of the portion of the interlayer insulating film located in a peripheral region. Another interlayer insulating film is formed so as to cover the magnetic resistor elements. In the another interlayer insulating film, formed are bit lines electrically coupled to the magnetic resistor elements. Immediately below the magnetic resistor elements, formed are digit lines.
Public/Granted literature
- US20110049657A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2011-03-03
Information query
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