Invention Grant
US08415769B2 Integrated circuits on a wafer and method for separating integrated circuits on a wafer
有权
晶圆上的集成电路和用于分离晶片上的集成电路的方法
- Patent Title: Integrated circuits on a wafer and method for separating integrated circuits on a wafer
- Patent Title (中): 晶圆上的集成电路和用于分离晶片上的集成电路的方法
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Application No.: US12668482Application Date: 2008-07-10
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Publication No.: US08415769B2Publication Date: 2013-04-09
- Inventor: Heimo Scheucher , Guido Albermann , David Ceccarelli
- Applicant: Heimo Scheucher , Guido Albermann , David Ceccarelli
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP07112355 20070712
- International Application: PCT/IB2008/052779 WO 20080710
- International Announcement: WO2009/007930 WO 20090115
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L21/78

Abstract:
Integrated circuits (1) on a wafer comprise a wafer substrate (2) and a structure applied on a surface (4) of the wafer substrate (2). The structure forms a plurality of integrated circuits (1) formed on the wafer substrate (2) and the integrated circuits (1) are separated by saw lines (6, 7). The structure comprises a plurality of superposed layers (9a-9e) formed on the wafer substrate (2) and a top layer (10) formed on the superposed layers (9a-9e). The integrated circuit (1) on the wafer further comprise a plurality of alignment marks (3) intended for aligning a separating device (18) for separating the integrated circuits (1) on the wafer into individual integrated circuits (1) during a separation process, wherein the alignment marks (3) are formed from at least one of the superposed layers (9a-9e).
Public/Granted literature
- US20100270655A1 Integrated Circuits On A Wafer and Method For Separating Integrated Circuits On A Wafer Public/Granted day:2010-10-28
Information query
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