Invention Grant
US08415769B2 Integrated circuits on a wafer and method for separating integrated circuits on a wafer 有权
晶圆上的集成电路和用于分离晶片上的集成电路的方法

  • Patent Title: Integrated circuits on a wafer and method for separating integrated circuits on a wafer
  • Patent Title (中): 晶圆上的集成电路和用于分离晶片上的集成电路的方法
  • Application No.: US12668482
    Application Date: 2008-07-10
  • Publication No.: US08415769B2
    Publication Date: 2013-04-09
  • Inventor: Heimo ScheucherGuido AlbermannDavid Ceccarelli
  • Applicant: Heimo ScheucherGuido AlbermannDavid Ceccarelli
  • Applicant Address: NL Eindhoven
  • Assignee: NXP B.V.
  • Current Assignee: NXP B.V.
  • Current Assignee Address: NL Eindhoven
  • Priority: EP07112355 20070712
  • International Application: PCT/IB2008/052779 WO 20080710
  • International Announcement: WO2009/007930 WO 20090115
  • Main IPC: H01L23/544
  • IPC: H01L23/544 H01L21/78
Integrated circuits on a wafer and method for separating integrated circuits on a wafer
Abstract:
Integrated circuits (1) on a wafer comprise a wafer substrate (2) and a structure applied on a surface (4) of the wafer substrate (2). The structure forms a plurality of integrated circuits (1) formed on the wafer substrate (2) and the integrated circuits (1) are separated by saw lines (6, 7). The structure comprises a plurality of superposed layers (9a-9e) formed on the wafer substrate (2) and a top layer (10) formed on the superposed layers (9a-9e). The integrated circuit (1) on the wafer further comprise a plurality of alignment marks (3) intended for aligning a separating device (18) for separating the integrated circuits (1) on the wafer into individual integrated circuits (1) during a separation process, wherein the alignment marks (3) are formed from at least one of the superposed layers (9a-9e).
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