Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US13026669Application Date: 2011-02-14
-
Publication No.: US08415776B2Publication Date: 2013-04-09
- Inventor: Yasutaka Nakashiba
- Applicant: Yasutaka Nakashiba
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2007-18239 20070129
- Main IPC: H01L23/52
- IPC: H01L23/52
Abstract:
A semiconductor device (1) includes a wiring (10) and dummy conductor patterns (20). The wiring (10) is a wiring through which a current with a frequency of 5 GHz or higher flows. Near the wiring (10), the dummy conductor patterns (20) are formed. A planar shape of each of the dummy conductor patterns (20) is equivalent to a shape with an internal angle larger than 180°.
Public/Granted literature
- US20110133317A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-06-09
Information query
IPC分类:
