Invention Grant
- Patent Title: Semiconductor device having stable signal transmission at high speed and high frequency
- Patent Title (中): 具有高速,高频信号传输稳定的半导体装置
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Application No.: US12989777Application Date: 2009-04-14
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Publication No.: US08415794B2Publication Date: 2013-04-09
- Inventor: Kentaro Kumazawa , Yoshihiro Tomura
- Applicant: Kentaro Kumazawa , Yoshihiro Tomura
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2008-123645 20080509
- International Application: PCT/JP2009/001724 WO 20090414
- International Announcement: WO2009/136468 WO 20091112
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40

Abstract:
A semiconductor device includes a semiconductor element having a plurality of element electrodes formed thereon, a circuit board having board electrodes respectively corresponding to the element electrodes formed thereon and having the semiconductor element mounted thereon, and bumps each of which is provided on at least one of the element electrode and the board electrode, and connects together the element electrode and the board electrode corresponding to each other when the semiconductor element is mounted on the circuit board. Furthermore, at least one of a dielectric layer and a resistive layer is provided between at least one of the bumps and the element or board electrode on which the at least one of the bumps is provided, so that the element or board electrode, the dielectric layer or the resistive layer, and the bump form a parallel-plate capacitor or electrical resistance.
Public/Granted literature
- US20110042808A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2011-02-24
Information query
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