Invention Grant
- Patent Title: Gold wire for semiconductor element connection
- Patent Title (中): 金线用于半导体元件连接
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Application No.: US12294416Application Date: 2007-03-23
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Publication No.: US08415797B2Publication Date: 2013-04-09
- Inventor: Keiichi Kimura , Tomohiro Uno , Takashi Yamada , Kagehito Nishibayashi
- Applicant: Keiichi Kimura , Tomohiro Uno , Takashi Yamada , Kagehito Nishibayashi
- Applicant Address: JP Tokyo JP Saitama
- Assignee: Nippon Steel & Sumikin Materials Co., Ltd.,Nippon Micrometal Corporation
- Current Assignee: Nippon Steel & Sumikin Materials Co., Ltd.,Nippon Micrometal Corporation
- Current Assignee Address: JP Tokyo JP Saitama
- Agency: McDermott Will & Emery LLP
- Priority: JP2006-082565 20060324; JP2007-015430 20070125
- International Application: PCT/JP2007/056011 WO 20070323
- International Announcement: WO2007/111248 WO 20071004
- Main IPC: H01L23/49
- IPC: H01L23/49

Abstract:
A gold wire for semiconductor element connection having high strength and bondability. The connection has a limited amount of at least one element selected from calcium and rare earth elements, and a limited amount of at least one element selected from a group consisting of titanium, vanadium, chromium, hafnium, niobium, tungsten, and zirconium. The incorporation of a suitable amount of palladium or beryllium is preferred. The incorporation of calcium and rare earth element can improve the strength and young's modulus of a gold wire, and the incorporation of titanium and the like can reduce a deterioration in the roundness of press-bonded shape of press-bonded balls in the first bonding caused by the incorporation of calcium and rare earth elements. The bonding wire can simultaneously realize mechanical properties and bondability capable of meeting a demand for a size reduction in semiconductor and a reduction in electrode pad pitch.
Public/Granted literature
- US20090115059A1 GOLD WIRE FOR SEMICONDUCTOR ELEMENT CONNECTION Public/Granted day:2009-05-07
Information query
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