Invention Grant
- Patent Title: Etched wafers and methods of forming the same
- Patent Title (中): 蚀刻晶片及其形成方法
-
Application No.: US12971465Application Date: 2010-12-17
-
Publication No.: US08415805B2Publication Date: 2013-04-09
- Inventor: Hong Shen
- Applicant: Hong Shen
- Applicant Address: US MA Woburn
- Assignee: Skyworks Solutions, Inc.
- Current Assignee: Skyworks Solutions, Inc.
- Current Assignee Address: US MA Woburn
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
Etched wafers and methods of forming the same are disclosed. In one embodiment, a method of etching a wafer is provided. The method includes forming a metal hard mask on the wafer using electroless plating, patterning the metal hard mask, and etching a plurality of features on the wafer using an etcher. The plurality of featured are defined by the metal hard mask.
Public/Granted literature
- US20120153476A1 ETCHED WAFERS AND METHODS OF FORMING THE SAME Public/Granted day:2012-06-21
Information query
IPC分类:
